- 閾電淋度
- 閾電流密度
- 閾值電流密度
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threshold current density中文什么意思
例句與用法
- The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density , high characteristic temperature and high cod limit , which make ld lasers achieve higher output power and longer ufe . therefore , ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas應(yīng)變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學(xué)災(zāi)變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應(yīng)變量子阱結(jié)構(gòu)可以用于大功率半導(dǎo)體激光器的制備。 - For our laboratory is changing toward industrialization , a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done . how the parameters , such as threshold current density , slope efficiency , fwhm and spectrum width , are influenced and how much the influence is , are discussed by the numbers . the effective means how to improve a certain performance parameter are purposed too
由于本實(shí)驗(yàn)室正處于由試驗(yàn)研究向產(chǎn)業(yè)化邁進(jìn)的階段，針對常規(guī)ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統(tǒng)論述了常規(guī)量子阱激光器的各項(xiàng)性能參數(shù)?閾值電流密度、斜率效率、遠(yuǎn)場發(fā)散角、光譜線寬等的影響因素及改進(jìn)的有效辦法，并針對激光器p ? i線性度不好、遠(yuǎn)場發(fā)散角出現(xiàn)多瓣的現(xiàn)象，通過理論分析找出原因所在并進(jìn)行了改進(jìn)，有效解決了以上問題。 - The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance , it has longe - lived , low threshold current density , high efficiency , high luminosity and excellent monochromatic , coherence , directionality , etc . the high - power semiconductor laser is widely applied to the fields , such as military , industrial machining , communication , information processing , medical treatment , etc . the material ' s epitaxy is the foundation of the whole laser ' s fabricating , and it has important influence on the optics and electricity performance about the laser
大功率半導(dǎo)體量子阱激光器是一種性能優(yōu)越的發(fā)光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點(diǎn)，廣泛應(yīng)用于軍事、工業(yè)加工、通信及信息處理、醫(yī)療保健等領(lǐng)域。材料的外延生長是整個激光器器件制作的基礎(chǔ)，對器件的光學(xué)和電學(xué)性能有著重要的影響，生長不出優(yōu)質(zhì)的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導(dǎo)體激光器制作過程之中的重中之重。 - Based on the above , we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers , and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output , which will promote the achievement of higher reliability , lower threshold current arrayed surface - emiting lasers laser for high power output
在此基礎(chǔ)上進(jìn)行了面發(fā)射半導(dǎo)體激光器二維( 2d )列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉(zhuǎn)鏡面發(fā)射陣列半導(dǎo)體激光器，為研制高可靠性、高功率、低閾值電流的面發(fā)射陣列半導(dǎo)體激光器奠定了一定的基礎(chǔ)。